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Persistent Identifier
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perma:LIST.Q1RRAT |
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Publication Date
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2026-07-06 |
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Title
| Roadmap on ferroelectric hafnia- and zirconia-based materials and devices [* Cross-Reference *] |
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Other Identifier
| https://doi.org/10.1063/5.0148068
SCOPUS_ID:85170280278 |
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Author
| Silva, José P.B. (Universidade do Minho, Universidade do Minho)Universidade do Minho, Universidade do MinhoORCID0000-0002-3485-7032
Alcala, Ruben (NaMLab GGmbH)NaMLab GGmbHORCID0000-0003-2799-9793
Avci, Uygar E. (Intel Corporation)Intel CorporationORCID0000-0002-0109-1923
Barrett, Nick (Université Paris-Saclay)Université Paris-SaclayORCID0000-0002-8228-0805
Bégon-Lours, Laura (IBM Research - Zurich)IBM Research - ZurichORCID0000-0003-2520-3317
Borg, Mattias (Institutionen för Elektro- och Informationsteknik, NanoLund, Lund University)Institutionen för Elektro- och Informationsteknik, NanoLund, Lund UniversityORCID0000-0003-1217-369X
Byun, Seungyong (Inter-University Semiconductor Research Center)
Chang, Sou Chi (Intel Corporation)Intel CorporationORCID0000-0001-8128-7784
Cheong, Sang Wook (Department of Physics and Astronomy)Department of Physics and AstronomyORCID0000-0001-9905-6175
Choe, Duk Hyun (Samsung Group)Samsung GroupORCID0000-0002-2775-8976
Coignus, Jean (Université Grenoble Alpes)Université Grenoble AlpesORCID0000-0001-8898-5999
Deshpande, Veeresh (Helmholtz-Zentrum Berlin für Materialien und Energie (HZB))Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)ORCID0000-0002-0349-4857
Dimoulas, Athanasios (National Centre for Scientific Research "DEMOKRITOS")National Centre for Scientific Research "DEMOKRITOS"ORCID0000-0003-3199-1356
Dubourdieu, Catherine (Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Freie Universität Berlin)Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Freie Universität BerlinORCID0000-0002-4642-6897
Fina, Ignasi (CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB))CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB)ORCID0000-0003-4182-6194
Funakubo, Hiroshi (Institute of Science Tokyo)Institute of Science TokyoORCID0000-0002-1106-200X
Grenouillet, Laurent (Université Grenoble Alpes)Université Grenoble AlpesORCID0000-0001-6721-0393
Gruverman, Alexei (University of Nebraska–Lincoln)University of Nebraska–LincolnORCID0000-0003-0492-2750
Heo, Jinseong (Samsung Group)Samsung GroupORCID0000-0003-2530-488X
Hoffmann, Michael (Department of Electrical Engineering and Computer Sciences)Department of Electrical Engineering and Computer SciencesORCID0000-0001-6493-3457
Hsain, H. Alex (NC State College of Engineering)NC State College of EngineeringORCID0000-0002-6745-829X
Huang, Fei Ting (Department of Physics and Astronomy)Department of Physics and AstronomyORCID0000-0001-9810-2811
Hwang, Cheol Seong (Inter-University Semiconductor Research Center)Inter-University Semiconductor Research CenterORCID0000-0002-6254-9758
Íñiguez, Jorge (Luxembourg Institute of Science and Technology, University of Luxembourg)Luxembourg Institute of Science and Technology, University of LuxembourgORCID0000-0001-6435-3604
Jones, Jacob L. (NC State College of Engineering)NC State College of EngineeringORCID0000-0002-9182-0957
Karpov, Ilya V. (Intel Corporation)Intel CorporationORCID0000-0003-3146-7992
Kersch, Alfred (Hochschule München)Hochschule MünchenORCID0000-0003-4407-555X
Kwon, Taegyu (Inter-University Semiconductor Research Center)Inter-University Semiconductor Research CenterORCID0000-0002-8988-0977
Lancaster, Suzanne (NaMLab GGmbH)NaMLab GGmbHORCID0000-0002-5689-2795
Lederer, Maximilian (Fraunhofer-Center Nanoelektronische Technologien CNT)Fraunhofer-Center Nanoelektronische Technologien CNTORCID0000-0002-1739-2747
Lee, Younghwan (NC State College of Engineering, Seoul National University)NC State College of Engineering, Seoul National UniversityORCID0000-0001-8485-6807
Lomenzo, Patrick D. (NaMLab GGmbH)NaMLab GGmbHORCID0000-0001-8208-3871
Martin, Lane W. (Department of Materials Science and Engineering, Lawrence Berkeley National Laboratory)Department of Materials Science and Engineering, Lawrence Berkeley National LaboratoryORCID0000-0003-1889-2513
Martin, Simon (Université Grenoble Alpes)Université Grenoble AlpesORCID0009-0000-6928-3836
Migita, ShinjiORCID0000-0002-5936-9182
Mikolajick, Thomas (NaMLab GGmbH)NaMLab GGmbHORCID0000-0003-3814-0378
Noheda, BeatrizORCID0000-0001-8456-2286
Park, Min Hyuk (Inter-University Semiconductor Research Center, Seoul National University)Inter-University Semiconductor Research Center, Seoul National UniversityORCID0000-0001-6333-2668
Rabe, Karin M.ORCID0000-0002-7809-7282
Salahuddin, Sayeef (Lawrence Berkeley National Laboratory)Lawrence Berkeley National LaboratoryORCID0000-0002-0315-2208
Sánchez, Florencio (CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB))CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB)ORCID0000-0002-5314-453X
Seidel, Konrad (Fraunhofer-Center Nanoelektronische Technologien CNT)
Shimizu, TakaoORCID0000-0001-9508-7601
Shiraishi, TakahisaORCID0000-0002-2154-0589
Slesazeck, Stefan (NaMLab GGmbH)NaMLab GGmbHORCID0000-0002-0414-0321
Toriumi, Akira
Uchida, HiroshiORCID0000-0002-5448-2987
Vilquin, BertrandORCID0000-0002-7404-0019
Xu, XianghanORCID0000-0001-6854-300X
Ye, Kun Hee (Inter-University Semiconductor Research Center)Inter-University Semiconductor Research CenterORCID0000-0003-4953-2983
Schroeder, Uwe (NaMLab GGmbH)NaMLab GGmbHORCID0000-0002-6824-2386 |
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Point of Contact
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Use email button above to contact.
LIST RDS (LIST) |
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Description
| Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development. (2023-08-01)
***This entry has been automatically imported via Infodoc(ASO) CSV by LIST harvest scripts. Please refer to https://doi.org/10.1063/5.0148068 for the original and latest version of the dataset and data downloads*** (2026-06-19) |
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Subject
| Physics |
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Keyword
| ultralow-power electronic systems
undergone rapid scientific
rapid scientific development
electronic systems
hafnium and zirconium |
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Funding Information
| Nederlandse Organisatie voor Wetenschappelijk Onderzoek: DE-NA0003525 |
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Deposit Date
| 2023-08-01 |
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Data Type
| Article |
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Data Source
| APL Materials; eISSN: 2166532X, vol. 11, n° 8, 2023 |