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Persistent Identifier
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perma:LIST.NWQRF1 |
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Publication Date
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2026-07-06 |
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Title
| Ultralow Voltage Manipulation of Ferromagnetism [* Cross-Reference *] |
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Other Identifier
| https://doi.org/10.1002/adma.202001943
SCOPUS_ID:85085512641 |
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Author
| Prasad, Bhagwati (Department of Materials Science and Engineering, Western Digital) - ORCID: 0000-0002-2348-6993
Huang, Yen Lin (Department of Materials Science and Engineering, Lawrence Berkeley National Laboratory)
Chopdekar, Rajesh V. (Advanced Light Source, Berkeley)
Chen, Zuhuang (Department of Materials Science and Engineering)
Steffes, James (University of Connecticut)
Das, Sujit (Department of Materials Science and Engineering)
Li, Qian (University of California, Berkeley)
Yang, Mengmeng (University of California, Berkeley)
Lin, Chia Ching (Intel Corporation)
Gosavi, Tanay (Intel Corporation)
Nikonov, Dmitri E. (Intel Corporation)
Qiu, Zi Qiang (University of California, Berkeley)
Martin, Lane W. (Department of Materials Science and Engineering, Lawrence Berkeley National Laboratory)
Huey, Bryan D. (University of Connecticut)
Young, Ian (Intel Corporation)
Íñiguez, Jorge (Luxembourg Institute of Science and Technology, University of Luxembourg)
Manipatruni, Sasikanth (Intel Corporation, Kepler Computing)
Ramesh, Ramamoorthy (Department of Materials Science and Engineering, University of California, Berkeley) |
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Point of Contact
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Use email button above to contact.
LIST RDS (LIST) |
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Description
| Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories. (2020-07-01)
***This entry has been automatically imported via Infodoc(ASO) CSV by LIST harvest scripts. Please refer to https://doi.org/10.1002/adma.202001943 for the original and latest version of the dataset and data downloads*** (2026-06-11) |
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Subject
| Physics |
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Keyword
| magnetoelectrics
multiferroics
nonvolatile memories
spintronics
ultralow-power spintronics |
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Funding Information
| Basic Energy Sciences: DE‐AC02‐05CH11231 |
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Deposit Date
| 2020-07-01 |
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Data Type
| Article |
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Data Source
| Advanced Materials; ISSN: 09359648, eISSN: 15214095, vol. 32, n° 28 |