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Persistent Identifier
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perma:LIST.H9L4BE |
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Publication Date
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2026-07-06 |
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Title
| Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface [* Cross-Reference *] |
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Other Identifier
| https://doi.org/10.1002/adma.202105778
SCOPUS_ID:85120424320 |
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Author
| Zang, Yipeng (Nanjing University)
Di, Chen (Nanjing University)
Geng, Zhiming (Nanjing University)
Yan, Xuejun (Nanjing University)
Ji, Dianxiang (Nanjing University)
Zheng, Ningchong (Nanjing University)
Jiang, Xingyu (Nanjing University)
Fu, Hanyu (Nanjing University)
Wang, Jianjun (Pennsylvania State University)
Guo, Wei (Nanjing University)
Sun, Haoying (Nanjing University)
Han, Lu (Nanjing University)
Zhou, Yunlei (Nanjing University)
Gu, Zhengbin (Nanjing University)
Kong, Desheng (Nanjing University)
Aramberri, Hugo (Luxembourg Institute of Science and Technology) - ORCID: 0000-0003-2216-8931
Cazorla, Claudio (Universitat Politècnica de Catalunya) - ORCID: 0000-0002-6501-4513
Íñiguez, Jorge (Luxembourg Institute of Science and Technology, University of Luxembourg) - ORCID: 0000-0001-6435-3604
Rurali, Riccardo (CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB)) - ORCID: 0000-0002-4086-4191
Chen, Longqing (Pennsylvania State University)
Zhou, Jian (Nanjing University)
Wu, Di (Nanjing University)
Lu, Minghui (Nanjing University, Southern University of Science and Technology)
Nie, Yuefeng (Nanjing University) - ORCID: 0000-0002-3449-5393
Chen, Yanfeng (Nanjing University)
Pan, Xiaoqing (Samueli School of Engineering) |
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Point of Contact
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LIST RDS (LIST) |
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Description
| Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron–phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron–phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron–phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices. (2022-01-01)
***This entry has been automatically imported via Infodoc(ASO) CSV by LIST harvest scripts. Please refer to https://doi.org/10.1002/adma.202105778 for the original and latest version of the dataset and data downloads*** (2026-06-11) |
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Subject
| Physics |
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Keyword
| thermal transport plays
interfacial thermal resistance
Interfacial thermal transport
Interfacial thermal
thermal transport |
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Funding Information
| Ministerio de Ciencia, Innovación y Universidades: 2017YFA0303702 |
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Deposit Date
| 2022-01-01 |
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Data Type
| Article |
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Data Source
| Advanced Materials; ISSN: 09359648, eISSN: 15214095, vol. 34, n° 3, art. no. 2105778 |