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Persistent Identifier
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perma:LIST.GTIDSQ |
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Publication Date
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2026-07-06 |
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Title
| The role of lattice dynamics in ferroelectric switching [* Cross-Reference *] |
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Other Identifier
| https://doi.org/10.1038/s41467-022-28622-z
SCOPUS_ID:85125613550 |
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Author
| Shi, Qiwu (Department of Materials Science and Engineering, College of Materials Science and Engineering) - ORCID: 0000-0002-4776-5727
Parsonnet, Eric (University of California, Berkeley) - ORCID: 0000-0003-0723-6887
Cheng, Xiaoxing (Pennsylvania State University)
Fedorova, Natalya (Luxembourg Institute of Science and Technology)
Peng, Ren Ci (Xi'an Jiaotong University, Xidian University)
Fernandez, Abel (Department of Materials Science and Engineering)
Qualls, Alexander (University of California, Berkeley) - ORCID: 0000-0001-9070-026X
Huang, Xiaoxi (Department of Materials Science and Engineering)
Chang, Xue (College of Materials Science and Engineering)
Zhang, Hongrui (Department of Materials Science and Engineering)
Pesquera, David (Department of Materials Science and Engineering) - ORCID: 0000-0003-0681-3371
Das, Sujit (Department of Materials Science and Engineering, Indian Institute of Science) - ORCID: 0000-0001-9823-0207
Nikonov, Dmitri (Intel Corporation) - ORCID: 0000-0002-1436-1267
Young, Ian (Intel Corporation) - ORCID: 0000-0002-4017-5265
Chen, Long Qing (Pennsylvania State University) - ORCID: 0000-0003-3359-3781
Martin, Lane W. (Department of Materials Science and Engineering, Lawrence Berkeley National Laboratory) - ORCID: 0000-0003-1889-2513
Huang, Yen Lin (Department of Materials Science and Engineering, National Yang Ming Chiao Tung University) - ORCID: 0000-0002-6129-8547
Íñiguez, Jorge (Luxembourg Institute of Science and Technology, University of Luxembourg) - ORCID: 0000-0001-6435-3604
Ramesh, Ramamoorthy (Department of Materials Science and Engineering, University of California, Berkeley, Lawrence Berkeley National Laboratory) - ORCID: 0000-0003-0524-1332 |
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Point of Contact
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Use email button above to contact.
LIST RDS (LIST) |
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Description
| Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. (2022-12-01)
***This entry has been automatically imported via Infodoc(ASO) CSV by LIST harvest scripts. Please refer to https://doi.org/10.1038/s41467-022-28622-z for the original and latest version of the dataset and data downloads*** (2026-06-11) |
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Subject
| Physics |
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Keyword
| thin films remains
ultralow-power ferroelectric memory
ferroelectric thin films
logic devices
remains an important |
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Funding Information
| Semiconductor Research Corporation: DMR-1708615 |
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Deposit Date
| 2022-12-01 |
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Data Type
| Article |
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Data Source
| Nature Communications; eISSN: 20411723, vol. 13, n° 1, art. no. 1110 |