Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells [* Cross-Reference *]

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Mohit Sood; Hossam Elanzeery; Damilola Adeleye; Alberto Lomuscio; Florian Werner; Florian Ehré; Michele Melchiorre; Susanne Siebentritt, 2026, "Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells [* Cross-Reference *]", https://lore.list.lu/citation?persistentId=perma:LIST.4KEKXV, LIST Open Repository, V1

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Description	Post-device heat treatment (HT) in chalcopyrite [Cu (In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device, low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices, no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides. The origin of these changes in device performance was investigated with capacitance–voltage measurement, which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature-dependent current–voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly doped interfacial p⁺ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Cu-rich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. (2020-07-05) *This entry has been automatically imported via OpenAlex by LIST harvest scripts. Please refer to https://doi.org/10.1002/pip.3314 for the original and latest version of the publication* (2026-07-01)
Subject	Astronomy and Astrophysics; Engineering; Physics
Keyword	Passivation, Chalcopyrite, Selenide, Materials science, Optoelectronics, Doping, Energy conversion efficiency, Chemical engineering, Analytical Chemistry (journal), Layer (electronics), Copper, Metallurgy, Chemistry, Nanotechnology
License/Data Use Agreement	CC BY 4.0


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Persistent Identifier	perma:LIST.4KEKXV
Publication Date	2026-07-06
Title	Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells [* Cross-Reference *]
Other Identifier	https://doi.org/10.1002/pip.3314 OpenAlex ID: https://openalex.org/W3040520918
Author	Mohit Sood (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0002-2714-7737 Hossam Elanzeery (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0001-6032-2499 Damilola Adeleye (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0001-6359-9100 Alberto Lomuscio (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0002-3356-2486 Florian Werner (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0001-6901-8901 Florian Ehré (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0001-7711-6712 Michele Melchiorre (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0003-0536-907X Susanne Siebentritt (University of Luxembourg, Luxembourg Institute of Science and Technology) - ORCID: https://orcid.org/0000-0001-6522-1427
Point of Contact	Use email button above to contact. LIST QDKM (LIST)
Description	Post-device heat treatment (HT) in chalcopyrite [Cu (In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu-poor conditions but not under Cu excess. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu-rich and Cu-poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu-rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu-poor selenide device, low-temperature HT leads to passivation of bulk, whereas in Cu-rich devices, no such passivation was observed. The Cu-rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu-rich selenides, whereas it increases shunt resistance in Cu-rich sulfides. The origin of these changes in device performance was investigated with capacitance–voltage measurement, which shows the considerable decrease in carrier concentration with HT in Cu-poor CuInSe2, and temperature-dependent current–voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly doped interfacial p⁺ layer device model in Cu-rich selenide absorbers and explain the discrepancy between Cu-poor and Cu-rich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber. (2020-07-05) *This entry has been automatically imported via OpenAlex by LIST harvest scripts. Please refer to https://doi.org/10.1002/pip.3314 for the original and latest version of the publication* (2026-07-01)
Subject	Astronomy and Astrophysics; Engineering; Physics
Keyword	Passivation Chalcopyrite Selenide Materials science Optoelectronics Doping Energy conversion efficiency Chemical engineering Analytical Chemistry (journal) Layer (electronics) Copper Metallurgy Chemistry Nanotechnology
Topic Classification	Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties Semiconductor materials and interfaces
Deposit Date	2020-07-05
Data Type	Article
Data Source	Progress in Photovoltaics Research and Applications

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